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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
I AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V DD =– 54 V
1 5
–10
mJ
A
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V, I D = –250 μ A
–60
V
? BV DSS
? T J
I DSS
I GSSF
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
I D = –250 μ A, Referenced to25 ° C
V DS = –40 V, V GS = 0 V
V DS = –40 V,V GS = 0 V T J =–55 ° C
V GS = 20 V, V DS = 0 V
–52
–2
–25
100
mV/ ° C
μ A
nA
I GSSR
Gate–Body Leakage, Reverse
V GS = –20 V
V DS = 0 V
–100
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to25 ° C
V GS = –10 V, I D = –2.3 A
–1
–1.5
4
138
–3
250
V
mV/ ° C
m ?
On–Resistance
V GS = –4.5 V, I D = –1.6 A
V GS = –10 V,I D = –2.3A, T J =125 ° C
175
225
500
433
I D(on)
On–State Drain Current
V GS = –10 V, V DS = –5 V
–10
A
g FS
Forward Transconductance
V DS = –10 V,
I D = –2.3 A
5
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –30 V,
f = 1.0 MHz
V GS = 0 V,
394
53
23
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –30 V,
V GS = –10 V,
V DS = –30 V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –2.3 A,
6
9
16
3
9
1.4
12
18
29
6
13
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
1.7
nC
NDS9948 Rev B 1 (W)
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